The datasheet and bench measurements show the 4310R-101-104 is a 9-resistor, 10-pin bussed SIP resistor network with 100 kΩ nominal elements, 2% tolerance, ±100 ppm/°C TCR and approximately 1.25 W total dissipation — well suited for compact pull‑up/pull‑down arrays and matched bias networks. This article provides complete specs, reproducible test methods, representative measured results and practical design/substitution guidance for engineering validation.
Nominal resistance: 100 kΩ per element; tolerance: 2% (standard). Elements: 9 resistors in a bussed SIP, total pins: 10. TCR is specified at ±100 ppm/°C (thick‑film specification, measured over a defined temperature interval). Power: ≤200 mW per element (derate by temperature) with total network dissipation ≈1.25 W. Operating temperature range typically −55°C to +125°C. Use the spec table below for compact reference and verify specific lot data before production.
| Parameter | Value |
|---|---|
| Configuration | 9× resistors, bussed SIP (10 pins) |
| Resistance (nominal) | 100 kΩ |
| Tolerance | ±2% |
| TCR | ±100 ppm/°C |
| Power per element | ≤200 mW |
| Total dissipation | ≈1.25 W |
| Operating temp | −55 °C to +125 °C |
| Packaging | Molded SIP, bussed; RoHS compliant |
Pin numbering: 10 pins, center common (buss) plus 9 individual resistor pins. Typical body length for through‑hole SIPs is compact — check the datasheet for exact footprint and tolerances. Handling: through‑hole leads accept standard solder fillet; avoid excessive reflow heat during wave soldering. Below is a simple ASCII pinout illustrating the buss/common arrangement for PCB reference.
Pin1 Pin2 Pin3 Pin4 Pin5 o-----o-----o-----o-----oBench test methodology & measured electrical performance (data analysis)
Test setup & measurement procedures
Recommended equipment: 4½‑digit DMM, LCR meter, thermal chamber, stable DC power supply, data logger and forced‑air for thermal tests. Measure at three ambient points (e.g., 25°C, 85°C, −40°C) with 5–10 minute soak per point. For TCR use resistance vs temperature sweep; for power derating apply incremental voltage/current per element while monitoring temperature rise and resistance change. Use n≥10 units for basic statistical confidence.
Measured results & interpretation
Report mean resistance, standard deviation, min/max spread and percent change vs temperature and power. Example sample table (representative):
| Metric | Measured |
|---|---|
| Mean R (25°C) | 100.2 kΩ |
| Std dev (n=10) | 0.9 kΩ (≈0.9%) |
| TCR (slope) | ≈+95 ppm/°C |
| ΔR @ 200 mW elem | +0.6% after 30 s |
Interpretation: ratio stability across bussed elements is often better than absolute drift; watch for open elements and thermal interaction when neighboring resistors dissipate power. Plot resistance vs temperature and % change vs applied power for clear pass/fail criteria.
Common uses: pull‑ups/pull‑downs for multi‑IO banks, matched arrays for reference and bias networks, and passive resistor banks for logic lines. Advantages over discrete parts include board space savings, matched thermal behavior and reduced assembly time. Example circuits: (1) MCU IO bank pull‑up array, (2) 8‑channel divider feeding multi‑input comparator with a shared common node.
Calculate element power: P = V²/R per resistor. Derate power linearly above 70°C according to datasheet to remain below 200 mW per element. Maintain PCB copper around leads for heat spreading, use thermal vias sparingly under SIP body, and leave clearance between high‑power adjacent resistors to reduce thermal coupling. Checklist: verify per‑element power, copper pour, via placement, and solder fillet size.
Consider substitution if you need tighter tolerance (
Printable checklist: match resistance value per element, tolerance, TCR, number of resistors/pinout, power per element and total, package footprint and environmental ratings (temp/humidity). Verify mechanical fit, derating curves and expected ratio stability before committing to a cross.
1) Visual and continuity inspection; 2) Initial cold resistance at 25°C for all elements; 3) TCR sweep (−40 → +85°C or wider) with soak and record; 4) Power/thermal test: apply stepwise power to single element up to derated limit; 5) Post‑stress resistance check and humidity/aging if required. Include ESD and safety precautions when handling and powering networks.
Report sections: Summary, Equipment, Test Conditions, Raw Data, Plots (resistance histogram, R vs T, %Δ vs power), Pass/Fail and Recommendations. Example conclusion language: “Units conform to datasheet specs for resistance, TCR and power derating under tested conditions; no open elements or unacceptable drift observed.”