GT60N321(Q)

GT60N321(Q)

Part Number: GT60N321(Q)
Product Classification: Single IGBTs
Manufacturer: Toshiba Semiconductor and Storage
Description: IGBT 1000V 60A TO-3P
Packaging: Tube
ROHS Status: Yes
Currency: USD

Specification

  • Part Status Obsolete
  • Mounting Type Through Hole
  • Operating Temperature 150°C (TJ)
  • IGBT Type -
  • Input Type Standard
  • Test Condition -
  • Reverse Recovery Time (trr) 2.5 µs
  • Switching Energy -
  • Current - Collector (Ic) (Max) 60 A
  • Current - Collector Pulsed (Icm) 120 A
  • Voltage - Collector Emitter Breakdown (Max) 1000 V
  • Power - Max 170 W
  • Package / Case TO-3PL
  • Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
  • Td (on/off) @ 25°C 330ns/700ns
  • Supplier Device Package TO-3P(LH)